Fig. 3


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(a) Top view of a Si wafer with a grid of catapulted blisters at 1.5 μm spacing. KOH etching results in a clean array of 1.3 μm inverted-pyramids seen in top and cross-sectional views (inset) (b) and in a large area oblique-view (c). The defect-free texture indicates the high reproducibility offered by the devised technique. (d) Shows an array of 1.27 μm sized inverted-pyramids placed at a Λx = 1.5 μm and Λy = 1.7 μm. (e) SEM image of a University of Toronto crest micro-patterned with inverted-pyramid structure shown in (e) (inset) demonstrates the capability of the technique to selectively texture areas, leaving untextured planar areas for front contacts. The patterned areas appear bright in this image. (f) The optical image of the crest demonstrates the strong anti-reflective effect in the textured areas.

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