Fig. 2


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(a) SEM images of surface modifications in a 20 nm SiNx film on c-Si as a function of laser fluence. Corresponding atomic force micrographs and line profiles of the features are shown in (b) and (c), respectively. The vertical scale bar is 20 nm in each panel of (c). (d) Shows post-etching SEM micrographs of the morphology shown in (a), when etched in KOH for 2.5 min. The ablation crater diameter (circular marker (o)) and the inverted-pyramid size (square marker (Λ)) observed after 2.5 min KOH etching are shown in (e) together with select SEM images as a function of fluence. The mask aperture and the inverted pyramid are outlined by a dashed circle and a square, respectively, in each of the SEM images. Fluence zones for blistering (Region I) and low (Region II) and high (Region III) reproducible ejection are identified.

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