Fig. 1
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Left: Structural model of the poly-Si solar cell unit composed of a p-type crystalline Si absorber grain ( width), p+ back surface field and n+ emitter with an adjacent vertical grain boundary layer ( width). The contacts, defined as ohmic, are depicted in orange. The silicon nitride (SiN) top layer represents the antireflection coating. Right: Assumed defect distribution in the GB layer over the energy in the band gap for the particular case of a GB defect density of . For details see Tables 1 and 2.
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