Kësterite thin films for photovoltaics : a review

Topical issue: Photovoltaic Technical Conference (PVTC 2011)

Open Access

Tableau 2

Continued.

Synthesis method	Chalcogen and method	η (%)	I _sc	V _oc	FF
	of insertion		(mA/cm²)	(mV)	(%)

Sputtering of Cu/ZnSn/Cu [108]	Annealing 30 min 560 °C	4.6	15.4	545	55

Metallic precursors in alcohol [99]	Thermal treatment	4.2	23.2	305	55
	in Se atmosphere

Metal chlorines in dimethyl sulfoxide [145]	Thiourea in solution and	4.1	24.9	400	41
	Se atmosphere, 500 °C

Fast coevaporation (~20 min) of Cu, Sn, ZnS [75]	Cracked sulfur	4.1	13.0	541	60
	during evaporation

Cosputtering of Cu, Sn, Zn [146].	S in sealed glass tube	3.7 [146]	16.5	425	53
Variations with Cu/Sn, Zn and Cu/Sn,
ZnS [147, 148] and with Se
thermal treatment [149]

One-step electrodeposition of metals [16, 62, 85, 104, 150, 151, 152, 153].	H₂S in Ar at 550 °C	3.4 [62]	14.8	563	41
One-step electrodeposition (including sulfur) [154, 155, 156, 157]	for the record. Other
	techniques includes S in Ar,
	H₂S in Ar, S in N₂,
	Se and H₂

Reactive cosputtering of Cu, Zn, Sn in H₂S/Ar [30]	50% H₂S / Ar mixture at 5 mtorr	3.4	12.4	428	64

Sequential sputtering of Cu, Zn, Sn [158]	Se vapors at 500 °C for 30 min	3.2	20.7	359	43

PLD from CZTS based on sintered Cu₂S, ZnS	S in the CZTS pellets	3.14	8.8	651	55
and SnS₂. N₂ thermal treatment
at 500 °C during 1 h [159, 160, 161, 162]

Sol-gel solution	H₂S 3% in N₂	2.23	10.2	529	42
(metals/methoxyethanol) [91, 163].

Nanoparticles on flexible Al foil,		1.94
ZnS as buffer layer [118]

Successive ionic layer adsorption and reaction S	1.85	3.2	280	62
(SILAR) [164, 165] (measurements at 30 mW/cm°)

Sequential e-beam evaporation of Cu, Zn, Sn [166]	S vapors for 2h at 560 °C	1.7	9.78	478	38

Reactive sputtering from Cu₂ZnSn	H₂S plasma	1.35	9.52	0.343	41
target [167, 168]

Chemical bath deposition of SnS, ZnS,	H₂S	0.16	2.4	210	31
Cu ion exchange [169]	at 500 °C for 2 h

Evaporation from a quaternary source [170]		0.36

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