Tableau 2
Synthesis methods for CZTS solar cells.
Synthesis method | Chalcogen and method | η (%) | I sc | V oc | FF |
of insertion | (mA/cm2) | (mV) | (%) | ||
|
|||||
Spin-coating of metal-chalcogen colloids in a hydrazine solution, 540 °C | S, Se (in the colloids) | 10.1 [14] | 31 | 517 | 64 |
thermal treatment [14, 29, 64, 130, 131] | S/(S + Se) ~ 0.4 | 10.1 [29] | 39 | 423 | 62 |
S/(S + Se) ~ 0.03 | |||||
|
|||||
Coevaporation of metals and Se, three-stage process [73] | Se during coevaporation, | 9.15 [73] | 37.4 | 377 | 65 |
40 Å/s | |||||
|
|||||
Coevaporation of metals and cracked S on low-temp | Pure sulfur, | 8.4 [72] | 19,5 | 661 | 66 |
(150 °C substrate) followed by 5 min anneal | coevaporated. Mix of | ||||
at 570 °C at atmospheric pressure [72, 120] | coevaporated S and | ||||
Coevaporation of metals followed by 540 °C with S, | Se (7.5%) [121] | ||||
5 min [94, 103] | |||||
|
|||||
Monograin solar cells with S/Se gradient[74] | CZTSe monograin | 7.4 [74] | 18.4 | 720 | 60 |
(~50 μm), SnS2 | |||||
annealing causing a | |||||
0.1–2 μm S diffusion. | |||||
|
|||||
Monograin cells [19, 23, 76, 132] | S0,75, Se0,25 [76] | 7.3 [23] | 19.9 | 696 | 58 |
|
|||||
Sequential electrodeposition [71, 133, 134, 135, 136, 137, 138, 139, 140, 141] | 585 °C in S/N2 | 7.3 [71] | 22 | 567 | 58 |
for 12 min | |||||
|
|||||
Blade-coating of CZTS nanoparticles in hexanethiol. | S in the colloids, Se thermal treatment | 6.7 [142] | 30.4 | 420 | 52 |
Best efficiency (7.2%) after light-soaking. 6.8% | (20 min 500 °C) | 6.8 [25] | 21.5 | 640 | 49 |
with Cu2ZnSn0.3Ge0.7(S0.5, Se![]() |
|||||
|
|||||
Cosputtering of ZnS, SnS, Cu [13, 65] | 3 h at 580 °C with H2S | 6.7 | 17.9 | 610 | 62 |
|
|||||
Stacked deposition of ZnS (sputtering) / | 30 min in Se atmosphere | 6.0 | 31.5 | 390 | 49 |
Cu (evaporation) / Sn (evaporation) [106] | |||||
|
|||||
Stacks of evaporated metals [17, 113], 6.1% | Sulfurization | 5.8 | 15.8 | 618 | 60 |
with Cd buffer, 5.8 with Cd-free buffer. | |||||
Variation with evaporation of ZnS, Sn, Cu [100] | |||||
|
|||||
Open-Atmosphere Chemical Vapor Deposition (OA-CVD). | 520–560 °C for three hours | 6.0 | 16.5 | 658 | 55 |
Spray pyrolysis of metal-oxide precursors [143] | in 5 vol% H2S | ||||
balanced with N2. | |||||
|
|||||
Coevaporation of Cu, Zn, Sn, Se [98] | Thermal treatment in | 5.4 | 20.0 | 497 | 54 |
the presence of Sn and S | |||||
|
|||||
Sol-gel : metals and sulfur in ethanol [144] | Annealing under N2 + H2S | 5.1 | 18.9 | 517 | 53 |
(5%) atmosphere at | |||||
530 °C for 30 min |
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