Kësterite thin films for photovoltaics : a review

S. Delbos

doi:10.1051/epjpv/2012008

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Volume 3 (2012)

EPJ Photovolt., 3 (2012) 35004

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Topical issue: Photovoltaic Technical Conference (PVTC 2011)

Open Access

Tableau 2

Synthesis methods for CZTS solar cells.

Synthesis method	Chalcogen and method	η (%)	I _sc	V _oc	FF
	of insertion		(mA/cm²)	(mV)	(%)

Spin-coating of metal-chalcogen colloids in a hydrazine solution, 540 °C	S, Se (in the colloids)	10.1 [14]	31	517	64
thermal treatment [14, 29, 64, 130, 131]	S/(S + Se) ~ 0.4	10.1 [29]	39	423	62
	S/(S + Se) ~ 0.03

Coevaporation of metals and Se, three-stage process [73]	Se during coevaporation,	9.15 [73]	37.4	377	65
	40 Å/s

Coevaporation of metals and cracked S on low-temp	Pure sulfur,	8.4 [72]	19,5	661	66
(150 °C substrate) followed by 5 min anneal	coevaporated. Mix of
at 570 °C at atmospheric pressure [72, 120]	coevaporated S and
Coevaporation of metals followed by 540 °C with S,	Se (7.5%) [121]
5 min [94, 103]

Monograin solar cells with S/Se gradient[74]	CZTSe monograin	7.4 [74]	18.4	720	60
	(~50 μm), SnS₂
	annealing causing a
	0.1–2 μm S diffusion.

Monograin cells [19, 23, 76, 132]	S_0,75, Se_0,25 [76]	7.3 [23]	19.9	696	58

Sequential electrodeposition [71, 133, 134, 135, 136, 137, 138, 139, 140, 141]	585 °C in S/N₂	7.3 [71]	22	567	58
	for 12 min

Blade-coating of CZTS nanoparticles in hexanethiol.	S in the colloids, Se thermal treatment	6.7 [142]	30.4	420	52
Best efficiency (7.2%) after light-soaking. 6.8%	(20 min 500 °C)	6.8 [25]	21.5	640	49
with Cu₂ZnSn_0.3Ge_0.7(S_0.5, Se

Cosputtering of ZnS, SnS, Cu [13, 65]	3 h at 580 °C with H₂S	6.7	17.9	610	62

Stacked deposition of ZnS (sputtering) /	30 min in Se atmosphere	6.0	31.5	390	49
Cu (evaporation) / Sn (evaporation) [106]

Stacks of evaporated metals [17, 113], 6.1%	Sulfurization	5.8	15.8	618	60
with Cd buffer, 5.8 with Cd-free buffer.
Variation with evaporation of ZnS, Sn, Cu [100]

Open-Atmosphere Chemical Vapor Deposition (OA-CVD).	520–560 °C for three hours	6.0	16.5	658	55
Spray pyrolysis of metal-oxide precursors [143]	in 5 vol% H₂S
	balanced with N₂.

Coevaporation of Cu, Zn, Sn, Se [98]	Thermal treatment in	5.4	20.0	497	54
	the presence of Sn and S

Sol-gel : metals and sulfur in ethanol [144]	Annealing under N₂ + H₂S	5.1	18.9	517	53
	(5%) atmosphere at
	530 °C for 30 min

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