Tableau 1

Large area cell results (cz-Si, 1−3 Ω cm) reached with AlOx based rear-passivation dielectric layer stack. The AlOx passivation and the SiNx capping layers have a thickness of 10 and 110 nm, respectively.

Cell type Size Jsc Voc FF Eta
(cm2) (mA/cm2) (mV) (%) (%)

Al2O3 pass. PERC Average 148.25 38.0 643 77.6 19.0
(4 cells) ±0.2 ±1 ±0.2 ±0.1

Best cell 148.25 38.2 645 77.7 19.1

SiOx pass. i-PERC Best cell 148.25 37.8 638 77.7 18.7

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