Fig. 8


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Emitter saturation current density vs. emitter sheet resistance extracted from lifetime measurements. Full symbols are representing IMEC results, while hollow symbols are representing values published in literature for emitters passivated with SiNx [14, 15]. Full squares are POCl3 diffused emitter passivated with PECVD SiN, Full triangles are POCl3 diffused emitter passivated with a thermally grown Silicon oxide (TOx) and SiN stack, full circles are P-implanted emitter passivated with thermal oxide. These lifetime measurements have been performed in IMEC on 1−3 Ω cm, 4-inch, fz-Silicon wafer and extracted from QSSPC measurements.

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