Tableau 1
Dependence of the properties of N-implanted ZnO:Ga films on the annealing treatment.
| Dose | Annealing | Resistivity | Concentration | Mobility | Type | Transmittance |
| (cm-2) | conditions | (Ω cm) | (cm-3) | (cm2/V s) | (%) | |
|
|
||||||
| 1 × 1015 | N2, 400 °C, 10 s | 0.1 | 1 × 1020 | 0,5 | n | 83 |
| O2, 550 °C, 30 min | 3.5 × 10-3 | 7.6 × 1019 | 23 | n | 87 | |
|
|
||||||
| 5 × 1015 | N2, 400 °C, 10 s | 0.16 | 5 × 1019 | 0.7 | n | 85 |
| O2, 550 °C, 30 min | 4 × 10-3 | 6.4 × 1019 | 23 | n | 87 | |
|
|
||||||
| 1 × 1016 | N2, 400 °C, 10 s | 0.46 | 2.8 × 1019 | 0.6 | p | 90 |
| O2, 550 °C, 30 min | 4.8 × 10-3 | 6 × 1019 | 21 | n | 87 | |
|
|
||||||
| 2 × 1016 | N2, 400 °C, 10 s | 0.23 | 9 × 1019 | 0.3 | n | 84 |
| N2, 550 °C, 10 s | 4.3 × 10-3 | 1.4 × 1020 | 11 | n | 85 | |
| O2, 550 °C, 30 min | 5.8 × 10-3 | 5.1 × 1019 | 21 | n | 87 | |
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