Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

Topical issue: Photovoltaic Technical Conference (PVTC 2011)

Open Access

Fig. 8

Plot of the absorption squared (αhν)² versus phonon energy for (a) as deposited ZnO:Ga films (blue line), and N-implanted ZnO:Ga films (implant dose of 2 × 10¹⁶ cm^-2) (b) not annealed (green line); (c) annealed in N₂ at 400 for 10 s (red line); (c) annealed in N₂ at 550 for 10 s (black line).

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