Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

Topical issue: Photovoltaic Technical Conference (PVTC 2011)

Open Access

Fig. 5

GI-XRD patterns of TPJ-annealed 30-nm-thick n⁺-, p⁺-, and intrinsic- crystallized Si films on textured AZO-coated glass substrates after TPJ annealing at a T_max of 825 °C. The result of intrinsic- crystallized Si on flat AZO is also shown as a reference.

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