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The surface structures of films deposited at different substrate temperatures after etching in diluted HF solution (1%): (a) 350 °C, (b) 325 °C, (c) 300 °C, (d) 275 °C, (e) 250 °C as well as etching in diluted HCl solution (0.5%), (f) 350 °C, (g) 325 °C, (h) 300 °C, (i) 275 °C, (j) 250 °C.
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