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Table 1
Main electrical parameters of the pm-Si:H and μc-Si:H intrinsic layers introduced in the simulation.
| Parameter | pm-Si:H | μc-Si:H |
| intrinsic | intrinsic | |
| layer | layer | |
|
|
||
| Mobility gap EG (eV) | 1.85 | 1.23 |
| Donor characteristic energy EUD (eV) | 0.047 | 0.02 |
| Acceptor characteristic energy EUV (eV) | 0.03 | 0.01 |
| Prefactor GD0, GV0 (cm-3 eV-1) | 4 × 1021 | 4 × 1021 |
| Donor density of states Gaussian peak Dmax (cm-3 eV-1) | As-deposited state: 5 × 1015 | 1.7 × 1016 |
| Light soaked state: 1 × 1017 | ||
| Donor position of the Gaussian peak | 0.8 | 0.5 |
| Emax (eV), EV taken as reference | ||
| As-deposited state: 5 × 1015 | 1.7 × 1016 | |
| Light soaked state: 1 × 1017 | ||
| Acceptor density of states Gaussian peak Dmax (cm-3 eV-1) | ||
| Acceptor position of the Gaussian peak Emax (eV) | 1.3 | 0.8 |
| Standard deviation σ0D, σ0V (eV) | 0.2 | 0.18 |
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