Volume 11, 2020
Chalcogenide Materials for Photovoltaics 2020
|Number of page(s)||5|
|Published online||21 October 2020|
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers
Zentrum für Sonnenenergie- und Wasserstoff- Forschung, Meitnerstraße 1, 70563 Stuttgart, Germany
* e-mail: firstname.lastname@example.org
Received in final form: 15 September 2020
Accepted: 17 September 2020
Published online: 21 October 2020
Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers.
Key words: CIGS solar cells / RbF-PDT / Zn(O,S) / characterization
© A. Kanevce et al., published by EDP Sciences, 2020
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