| Issue |
EPJ Photovolt.
Volume 6, 2015
Topical issue: Photovoltaic Technical Conference (PVTC 2014)
|
|
|---|---|---|
| Article Number | 65301 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.1051/epjpv/2015002 | |
| Published online | 23 February 2015 | |
https://doi.org/10.1051/epjpv/2015002
Effects of process parameters on μc - Si1 − XGeX:H solar cells performance and material properties
NEXT ENERGY, EWE Research Centre for Energy Technology at the University of Oldenburg, Carl-von-Ossietzky-Str. 15, 26129 Oldenburg, Germany
a
e-mail: nies.reininghaus@next-energy.de
Received: 16 October 2014
Accepted: 21 January 2015
Published online: 23 February 2015
On our way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/μc-Si:H/μc-SiGe:H configuration and μc-SiGe:H single cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on an industrial like 30 × 30 cm2 PECVD tool. To attain a better understanding of the μc-SiGe:H absorber we varied process pressure, germane flow, dilution and silane flow while looking at the electrical and material properties. By realizing a total absorber thickness less than 2 μm for high efficiency cell concepts in triple technology, our intention is to develop an industrial relevant process with attractive fabrication times by benefiting from the enhanced absorption of μc-SiGe:H compared to μc-Si:H.
© Reininghaus et al., published by EDP Sciences, 2015
This is an Open Access article distributed under the terms of the Creative
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