| Issue |
EPJ Photovolt.
Volume 4, 2013
Topical issue: Photovoltaic Technical Conference (PVTC 2012)
|
|
|---|---|---|
| Article Number | 45108 | |
| Number of page(s) | 5 | |
| DOI | https://doi.org/10.1051/epjpv/2013019 | |
| Published online | 13 November 2013 | |
https://doi.org/10.1051/epjpv/2013019
Laser annealing of thin film polycrystalline silicon solar cell
1 ICube-University of Strasbourg and CNRS, Strasbourg, France
2 IREPA Laser, Strasbourg, France
3 HZB, Berlin, Germany
4 SUNTECH, Thalheim, Germany
5 SUNTECH, Botany, Australia
a
e-mail: amartyappb@yahoo.com
Received: 18 September 2012
Accepted: 11 April 2013
Published online: 13 November 2013
Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.
© Chowdhury et al., published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative
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