Volume 2, 2011
Topical issue: Photovoltaic Technical Conference (PVTC 2011)
|Number of page(s)||4|
|Section||Semiconductor Thin Films|
|Published online||29 September 2011|
Optical evaluation of doping concentration in SiO2 doping source layer for silicon quantum dot materials
The University of New South Wales, UNSW, Sydney, NSW
2 Institute of Semiconductor Electronic, RWTH Aachen University, Aachen, Germany
Received: 22 June 2011
Accepted: 16 August 2011
Published online: 29 September 2011
We have investigated and proposed a simple method to correlate optical absorption with high B doping concentrations in thin SiO2 films that offer a potential doping source for Si quantum dots. SiO2 films with boron and phosphorus were deposited using a computer controlled co-sputtering system. By assessing the absorption coefficients, it was observed that the doping can dramatically increase the absorption of the transparent SiO2. Additionally, the highly doped SiO2 films have a very broad Urbach like absorption tail and the absorption corresponds well with the doping level.
© EDP Sciences 2011
This is an Open Access article distributed under the terms of the Creative Commons Attribution-Noncommercial License 3.0, which permits unrestricted use, distribution, and reproduction in any noncommercial medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.