Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation studyS. Chakraborty, R. Cariou, M. Labrune, P. Roca i Cabarrocas and P. ChatterjeeEPJ Photovolt., 4 (2013) 45103DOI: https://doi.org/10.1051/epjpv/2013014
