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Cited article:

Microcrystalline Ge interlayer-bonded InGaAs/Si avalanche photodiode with ultrahigh responsivity of 135 A/W and gain of 190

Menghui Guo, Xiaolong Jiang, Jie Wang, Junfeng Yang, Zikai Lin, Yiyuan Fan, Songyan Chen and Shaoying Ke
Optics Express 34 (2) 2556 (2026)
https://doi.org/10.1364/OE.582360

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim and Jae Cheol Shin
physica status solidi (RRL) – Rapid Research Letters 19 (5) (2025)
https://doi.org/10.1002/pssr.202500001

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

Mattia da Lisca, José Alvarez, James P Connolly, Nicolas Vaissiere, Karim Mekhazni, Jean Decobert and Jean-Paul Kleider
Beilstein Journal of Nanotechnology 14 725 (2023)
https://doi.org/10.3762/bjnano.14.59