Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

This article has been cited by the following article(s):

Optimization of ALD $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell

Akansha Bansal, Prashant Singh, Rajesh Kumar Jha and B. R. Singh
Applied Physics B 125 (6) (2019)
DOI: 10.1007/s00340-019-7232-x
See this article

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Patrik Ahlberg, Malkolm Hinnemo, Shi-Li Zhang and Jörgen Olsson
Journal of Electronic Materials 47 (3) 1757 (2018)
DOI: 10.1007/s11664-017-6023-6
See this article

Local Schottky contacts of embedded Ag nanoparticles in Al2O3/SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions

O Ibrahim Elmi, O Cristini-Robbe, M Y Chen, et al.
Nanotechnology 29 (28) 285403 (2018)
DOI: 10.1088/1361-6528/aac032
See this article

Silicon Materials

Zhi Peng Ling, Zheng Xin, Puqun Wang, et al.
Silicon Materials (2019)
DOI: 10.5772/intechopen.85039
See this article

Mechanical behavior of ultrathin sputter deposited porous amorphous Al 2 O 3 films

Astrid van der Rest, Hosni Idrissi, Frédéric Henry, et al.
Acta Materialia 125 27 (2017)
DOI: 10.1016/j.actamat.2016.11.037
See this article

Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

R. Kotipalli, B. Vermang, J. Joel, et al.
AIP Advances 5 (10) 107101 (2015)
DOI: 10.1063/1.4932512
See this article

Resonant tunneling MIIIS diode based on intrinsic quantum-well formation of ultra-thin atomic layered films after band-offset engineering

Joel Molina-Reyes, Hector Uribe-Vargas, Eduardo Ortega and Arturo Ponce
Applied Surface Science 458 166 (2018)
DOI: 10.1016/j.apsusc.2018.06.198
See this article

Silicon nanoridge array waveguides for nonlinear and sensing applications

Matthew W. Puckett, Rajat Sharma, Felipe Vallini, et al.
Optics Express 23 (22) 28224 (2015)
DOI: 10.1364/OE.23.028224
See this article

Impact of the firing step on Al2O3passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, Michel Gauthier and Nam Le Quang
Japanese Journal of Applied Physics 54 (8S1) 08KD21 (2015)
DOI: 10.7567/JJAP.54.08KD21
See this article

Optimisation of rear reflectance in ultra-thin CIGS solar cells towards >20% efficiency

Olivier Poncelet, Ratan Kotipalli, Bart Vermang, et al.
Solar Energy 146 443 (2017)
DOI: 10.1016/j.solener.2017.03.001
See this article

Ozone-Based Atomic Layer Deposition of Al2 O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

Yameng Bao, Mikko Laitinen, Timo Sajavaara and Hele Savin
Advanced Electronic Materials 3 (6) 1600491 (2017)
DOI: 10.1002/aelm.201600491
See this article

Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu(In,Ga)Se2 solar cell performances using SCAPS 1-D model

R. Kotipalli, O. Poncelet, G. Li, et al.
Solar Energy 157 603 (2017)
DOI: 10.1016/j.solener.2017.08.055
See this article

Ultra-thin ALD-AlOx/PEDOT:PSS hole selective passivated contacts: An attractive low cost approach to increase solar cell performance

Zhi Peng Ling, Zheng Xin, Gurleen Kaur, Cangming Ke and Rolf Stangl
Solar Energy Materials and Solar Cells 185 477 (2018)
DOI: 10.1016/j.solmat.2018.06.002
See this article

Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique

Vl. Kolkovsky and R. Stübner
Physica B: Condensed Matter 535 171 (2018)
DOI: 10.1016/j.physb.2017.07.028
See this article

Improved Stability of Porous Silicon in Aqueous Media via Atomic Layer Deposition of Oxides

Jonathan Rasson and Laurent A. Francis
The Journal of Physical Chemistry C 122 (1) 331 (2018)
DOI: 10.1021/acs.jpcc.7b08569
See this article

Effect of dielectric claddings on the electro-optic behavior of silicon waveguides

Rajat Sharma, Matthew W. Puckett, Hung-Hsi Lin, et al.
Optics Letters 41 (6) 1185 (2016)
DOI: 10.1364/OL.41.001185
See this article

Influence of annealing in H atmosphere on the electrical properties of Al 2 O 3 layers grown on p -type Si by the atomic layer deposition technique

Vl. Kolkovsky, R. Stübner, S. Langa, et al.
Solid-State Electronics 123 89 (2016)
DOI: 10.1016/j.sse.2016.06.005
See this article

Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

Shun Sing Liao, Yueh Chin Lin, Chuan Lung Chuang and Edward Yi Chang
International Journal of Photoenergy 2017 1 (2017)
DOI: 10.1155/2017/9503857
See this article

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Cai-Xia Hou, Xin-He Zheng, Rui Jia, et al.
Chinese Physics B 26 (9) 098103 (2017)
DOI: 10.1088/1674-1056/26/9/098103
See this article

Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires

Karl Winkler, Emmerich Bertagnolli and Alois Lugstein
Nano Letters 15 (3) 1780 (2015)
DOI: 10.1021/nl5044743
See this article

Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al 2 O 3 and post-metallization annealing

Joel Molina-Reyes, Hector Uribe-Vargas, Reydezel Torres-Torres, P.G. Mani-Gonzalez and A. Herrera-Gomez
Thin Solid Films 638 48 (2017)
DOI: 10.1016/j.tsf.2017.07.031
See this article

Characterizing the effects of free carriers in fully etched, dielectric-clad silicon waveguides

Rajat Sharma, Matthew W. Puckett, Hung-Hsi Lin, Felipe Vallini and Yeshaiahu Fainman
Applied Physics Letters 106 (24) 241104 (2015)
DOI: 10.1063/1.4922734
See this article

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

Zhi Peng Ling, Zheng Xin, Cangming Ke, et al.
Japanese Journal of Applied Physics 56 (8S2) 08MA01 (2017)
DOI: 10.7567/JJAP.56.08MA01
See this article

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Kwan Hong Min, Sungjin Choi, Myeong Sang Jeong, et al.
Current Applied Physics 19 (2) 155 (2019)
DOI: 10.1016/j.cap.2018.09.004
See this article

Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3

Hector Uribe-Vargas and Joel Molina-Reyes
Journal of Materials Science: Materials in Electronics 29 (18) 15496 (2018)
DOI: 10.1007/s10854-018-9104-2
See this article