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Cited article:

Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

S. Chakraborty, R. Cariou, M. Labrune, P. Roca i Cabarrocas, P. Chatterjee

EPJ Photovolt., 4 (2013) 45103

Published online: 2013-04-09

DOI: https://doi.org/10.1051/epjpv/2013014

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DOI: 10.1051/epjpv/2020002
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R. Cariou, I. Massiot, R. Ruggeri, N. Ramay, J. Tang, A. Cattoni, S. Collin, J. Nassar and P. Roca i Cabarrocas
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Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

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Nanophotonics-based low-temperature PECVD epitaxial crystalline silicon solar cells

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DOI: 10.1088/0022-3727/49/12/125603
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Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study

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Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping

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