Article references

Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C

M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Mauguin, P. Roca i Cabarrocas

EPJ Photovolt., 3 (2012) 30303

Published online: 2012-11-13

DOI: https://doi.org/10.1051/epjpv/2012010

This article has been cited by the following article(s):

Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells

Monalisa Ghosh, Pavel Bulkin, François Silva, et al.
Solar Energy Materials and Solar Cells 236 111535 (2022)
DOI: 10.1016/j.solmat.2021.111535
See this article

Formation of inverse cones in crystalline silicon by selective etching of amorphous regions resulting from epitaxial breakdown

H Mohsin, W Chen, D Daineka, P Roca i Cabarrocas and E V Johnson
Journal of Physics D: Applied Physics 54 (49) 495103 (2021)
DOI: 10.1088/1361-6463/ac22d8
See this article

Interfacial hydrogen incorporation in epitaxial silicon for layer transfer

Junyang An, Zhen Zheng, Ruiling Gong, et al.
Applied Surface Science 518 146057 (2020)
DOI: 10.1016/j.apsusc.2020.146057
See this article

Low-Temperature Plasma-Assisted Growth of Core–Shell GeSn Nanowires with 30% Sn

Edy Azrak, Wanghua Chen, Simona Moldovan, et al.
The Journal of Physical Chemistry C 124 (1) 1220 (2020)
DOI: 10.1021/acs.jpcc.9b10444
See this article

High mobility single-crystalline-like silicon thin films on inexpensive flexible metal foils by plasma enhanced chemical vapor deposition

P. Dutta, Y. Gao, M. Rathi, et al.
Acta Materialia 147 51 (2018)
DOI: 10.1016/j.actamat.2018.01.008
See this article

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

Romain Cariou, Wanghua Chen, Jean-Luc Maurice, et al.
Scientific Reports 6 (1) (2016)
DOI: 10.1038/srep25674
See this article

Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells

R. Cariou, J. Tang, N. Ramay, R. Ruggeri and P. Roca i Cabarrocas
Solar Energy Materials and Solar Cells 134 15 (2015)
DOI: 10.1016/j.solmat.2014.11.018
See this article

Ion Energy Threshold in Low-Temperature Silicon Epitaxy for Thin-Film Crystalline Photovoltaics

Bastien Bruneau, Romain Cariou, Jean-Christophe Dornstetter, et al.
IEEE Journal of Photovoltaics 4 (6) 1361 (2014)
DOI: 10.1109/JPHOTOV.2014.2357256
See this article

Romain Cariou, Jean-Luc Maurice, Jean Decobert and Pere Roca i Cabarrocas
2789 (2014)
DOI: 10.1109/PVSC.2014.6925508
See this article

In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates

Linwei Yu, Mingkun Xu, Jie Xu, et al.
Nano Letters 14 (11) 6469 (2014)
DOI: 10.1021/nl503001g
See this article

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

R. Cariou, R. Ruggeri, X. Tan, Giovanni Mannino, J. Nassar and P. Roca i Cabarrocas
AIP Advances 4 (7) (2014)
DOI: 10.1063/1.4886774
See this article

R. Cariou, I. Massiot, R. Ruggeri, N. Ramay, J. Tang, A. Cattoni, S. Collin, J. Nassar and P. Roca i Cabarrocas
0921 (2013)
DOI: 10.1109/PVSC.2013.6744294
See this article