Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study
EPJ Photovolt., 4 (2013) 45103
Published online: 2013-04-09
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates
Cyril Leon, Sylvain Le Gall, Marie-Estelle Gueunier-Farret, et al.EPJ Photovoltaics 11 4 (2020)
https://doi.org/10.1051/epjpv/2020002
Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes
R. Lachaume, M. Foldyna, G. Hamon, et al.Solar Energy Materials and Solar Cells 166 276 (2017)
https://doi.org/10.1016/j.solmat.2016.11.023
Nanophotonics-based low-temperature PECVD epitaxial crystalline silicon solar cells
Wanghua Chen, Romain Cariou, Martin Foldyna, et al.Journal of Physics D: Applied Physics 49 (12) 125603 (2016)
https://doi.org/10.1088/0022-3727/49/12/125603
Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trapping
Alexandre Gaucher, Andrea Cattoni, Christophe Dupuis, et al.Nano Letters 16 (9) 5358 (2016)
https://doi.org/10.1021/acs.nanolett.6b01240
Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study
R. Lachaume, R. Cariou, J. Decobert, et al.Energy Procedia 84 41 (2015)
https://doi.org/10.1016/j.egypro.2015.12.293
0921 (2013)
https://doi.org/10.1109/PVSC.2013.6744294