Table 3
Emitter recombination current density for a single surface (J0E) and Auger recombination contribution in the doped c-Si (p⁺) region (J0E,Auger): (a) for different oxide types for a BCl3 drive-in temperature of 900 °C; (b) as a function of the BCl3 drive-in temperature for the O3+TO30′ oxide configuration.
| (a) Oxide type | J0E (fA.cm−2) | J0E,Auger (fA.cm−2) | J0E,Auger / J0E (%) |
|---|---|---|---|
| TO-10’ | 63.7 | 2.91 | 4.57 |
| TO-20’ | 41.5 | 2.71 | 6.53 |
| O3+TO-20’ | 28.6 | 2.11 | 7.38 |
| O3+TO-30’ | 26.0 | 2.20 | 8.46 |
| (b) Drive-in temperature | J0E (fA.cm−2) | J0E,Auger (fA.cm−2) | J0E,Auger / J0E (%) |
| 850 °C | 26.2 | 1.51 | 5.76 |
| 900 °C | 28.6 | 2.20 | 7.69 |
| 950 °C | 30.7 | 2.74 | 8.92 |
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