Modeling the electrical mismatch caused by potential-induced degradation in crystalline silicon photovoltaic modules and strings

Special Issue on ‘EU PVSEC 2025: State of the Art and Developments in Photovoltaics', edited by Robert Kenny and Carlos del Cañizo

Open Access

Table 4

Parameter values of bypass diodes connected to the cell-substrings and PV module strings. Set to default values [42].

Saturation current IS [A]	Ohmic resistance RS [Ω]	Emission coefficient N	Recombination saturation current ISR [A]	Activation energy EG [eV]	Parameter measurement temperature TNOM [°C]
1 × 10−14	0	1	1 × 10−14	1.11	27

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