Table 1
Structure of the p+n single junction InP top cell (up) and InGaAs bottom cell (down).
| Layer | Material | Thickness (nm) | Doping level (cm−3) |
|---|---|---|---|
| Contact | (p++) In0.53Ga0.47As | 200 | +2×1019 |
| Etch-stop | (p+) InP | 10 | +1.5×1018 |
| Window | (p+) Al0.48In0.52As | 25 | +1.5×1018 |
| Emitter | (p+) InP | 150 | +1×1018 |
| Base | (n) InP | 3000 | −1×1017 |
| BSF | (n+) InP | 700 | −2×1018 |
| Substrate | (n) InP | ∞ | −2×1018 |
| Layer | Material | Thickness (nm) | Doping level (cm−3) |
| Contact | (p++) In0.53Ga0.47As | 250 | +2×1019 |
| Etch-stop | (p+) InP | 10 | +1.5×1018 |
| Window | (p+) Al0.31In0.53Ga0.16As | 30 | +1.5×1018 |
| Emitter | (p+) In0.53Ga0.47As | 200 | +1×1018 |
| Base | (n) In0.53Ga0.47As | 3000 | −1×1017 |
| BSF | (n+) InP | 400 | −2×1018 |
| Substrate | (n) InP | ∞ | −2×1018 |
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