Fig. 3
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(a) J–V characteristics under dark conditions of the obtained InP/InGaAs tandem cell (blue line) compared to the single J–V characteristics of InP top cell (red line) and InGaAs bottom cell (green line). (b) J–V characteristics under 1-sun illumination of the obtained InP/InGaAs tandem cell (blue line) compared to the single J–V characteristics of InP top cell (red line) and InGaAs bottom cell (green line).
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