Table 1
Si-IBC (2) external photovoltaic parameters calculated as specified in the theory section, compared with 2T Silicon device parameters from Kirchartz et al. 0. SQ-values under AM1.5G illumination saturation current density J 0,SQ , short circuit current density J sc,SQ and open circuit voltage V oc,SQ are compared the spectral responsed values J sc , V oc and to the EL and EQE analysis parameters J 0,rad , V oc,rad .
| Si-IBC (2) | Si (2T) Ref. [23] | |
|---|---|---|
| E g (eV) | 1.12 | 1.12 |
|
|
|
|
43.4 | 43.4 |
|
875 | 876 |
|
|
|
|
797 | 864 |
| J sc (mA/cm2) measured | 35.18 | 37.3 |
| V oc (mV) measured | 580 | 679 |
| ΔVoc,nrad (mV) | 217 | 185 |
|
0.27 | 0.21 |
| Eff (%) | 13.8 | 21 |
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