Electroluminescence analysis of silicon interdigitated back contact solar cells with a front surface selective band offset barrier

Special Issue on ‘Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', edited by A. Vossier, M. Gueunier-Farret, J.-P. Kleider and D. Mencaraglia

Open Access

Fig. 9

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Semilogarithmic plots of dark IV curves of bottom cells A, B, C, and D for 3T devices. The black arrow indicates the direction of decrease of the shunt resistance. The samples C and D have then less shunt resistance (152 Ωcm² and 118 Ωcm²) than the samples A and B (827.6 Ωcm² and 372.5 Ωcm² respectively). Shunt Resistance value is obtained by a two-diode fit model).

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