LIT images full sample with SiON passivation stack (left) and zoom on Schottky and MIS contact (AlO_X) (right). The test sample with the SiON passivation stack (left) shows a significantly lower reverse current and heat emission restricted to the 24 vias and the passivation defect at the wafer edge. The MIS contact (AlO_X) of the largest n-pads (⌀ = 20 mm) of the test structures (right) illustrating the increased current flow at the pad edges. Also indicated in the table below the pictures is the significantly higher current for the whole sample.