Fig. 1

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Cross sections of PERC (left) and HIP-MWT+ (right) cells showing the differences of the two cell concepts. The HIP-MWT+ cell features the additional through-metallization (via) which creates two additional electrical contacts in the cell, namely the MIS contact and the Schottky contact. The vias allow locating the n-contact and p-contact next to each other on the rear side of the cell (right). The yellow arrows show the current flow under reverse bias for the AlOX based passivation. This way the integrated bypass diode is realized.

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