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Table 1

Parameters used for the calculations [16,17].

Respective III-V Sub-cell InGaP GaAs
Lifetime n τn (s) 10−9 10−9
Lifetime p τp (s) 10−9 2 × 10−8
Diffusion coefficient of electrons Dn (cm2/s) 29 200
Diffusion coefficient of holes Dp (cm2/s) 1.0 9.2
Band gap (eV) 1.9 1.43
Dielectric permittivity 11.6 13.1
Donor density Nd (cm−3) 1017 1017
Acceptor density Na (cm−3) 1018 1018
Surface recombination velocities (cm/s) 103 103

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