Open Access
Table 1
Parameters used for the calculations [16,17].
| Respective III-V Sub-cell | InGaP | GaAs |
|---|---|---|
| Lifetime n τn (s) | 10−9 | 10−9 |
| Lifetime p τp (s) | 10−9 | 2 × 10−8 |
| Diffusion coefficient of electrons Dn (cm2/s) | 29 | 200 |
| Diffusion coefficient of holes Dp (cm2/s) | 1.0 | 9.2 |
| Band gap (eV) | 1.9 | 1.43 |
| Dielectric permittivity | 11.6 | 13.1 |
| Donor density Nd (cm−3) | 1017 | 1017 |
| Acceptor density Na (cm−3) | 1018 | 1018 |
| Surface recombination velocities (cm/s) | 103 | 103 |
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