PECVD growth conditions on both n++ and p++ substrates. The substrate temperature and RF power were fixed at 175 °C and 10 Watts, respectively. The H2 and SiH4 fluxes were set at 350 sccm and 5 sccm, respectively. Di refers to the inter-electrode distance in the PECVD reactor.
|Sample||Thickness (μm)||Di (mm)||Pressure (mTorr)|
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