Implied Voc of symmetric samples from Batches 2 and 3 on FZ wafers with wet SiOx\(p +) μc-Si before and after deposition of SiNx:H (no annealing step).
|SiOx layer||Before SiN||After SiN|
|RF-PECVD||549 mV||558 mV|
|Wet-chemical||619 mV||693 mV|
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