Table 1

Parameters and their default values used in simulation.

Wafer thickness 250 μm
Base doping (p-type, uniform) 1 × 1015 cm−3
Emitter doping (n-type, uniform) 1 × 1019 cm−3
Junction depth 300 nm
Volume SRH lifetime 1 ms
Front surface recombination velocity 1000 cm⋅s−1
Rear surface recombination velocity 10 000 cm⋅s−1
Inclination θ 0°
Top surrounding temperature T+,top 25 °C
Bottom surrounding temperature T+,bot 25 °C
Ambient temperature Tamb 25 °C
Emissivity in silicon ϵSi 0.8

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