Open Access
Table 1
Parameters and their default values used in simulation.
| Wafer thickness | 250 μm |
| Base doping (p-type, uniform) | 1 × 1015 cm−3 |
| Emitter doping (n-type, uniform) | 1 × 1019 cm−3 |
| Junction depth | 300 nm |
| Volume SRH lifetime | 1 ms |
| Front surface recombination velocity | 1000 cm⋅s−1 |
| Rear surface recombination velocity | 10 000 cm⋅s−1 |
| Inclination θ | 0° |
| Top surrounding temperature T+∞,top | 25 °C |
| Bottom surrounding temperature T+∞,bot | 25 °C |
| Ambient temperature Tamb | 25 °C |
| Emissivity in silicon ϵSi | 0.8 |
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