Parameters and their default values used in simulation.
|Wafer thickness||250 μm|
|Base doping (p-type, uniform)||1 × 1015 cm−3|
|Emitter doping (n-type, uniform)||1 × 1019 cm−3|
|Junction depth||300 nm|
|Volume SRH lifetime||1 ms|
|Front surface recombination velocity||1000 cm⋅s−1|
|Rear surface recombination velocity||10 000 cm⋅s−1|
|Top surrounding temperature T+∞,top||25 °C|
|Bottom surrounding temperature T+∞,bot||25 °C|
|Ambient temperature Tamb||25 °C|
|Emissivity in silicon ϵSi||0.8|
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