Table 7
Optimisation of the thickness of the pm-Si:H absorber layer for a double P-layer window design: P-μc-Si:H/P-μc-SiOx:H and N-μc-SiOx/ZnO:Al/Ag back structure. Results indicate that any thickness between 250 nm and 150 nm is good with the thinnest pm-Si:H cell having an edge regarding the stabilised efficiency.
| ZnO:Al/P-μc-Si/P-μc-SiOx/I-pm- | Jsc (mA cm-2) | Voc(volts) | FF | Efficiency (%) | |
| Si:H/N-μc-SiOx/ZnO:Al/Ag/glass | |||||
|
|
|||||
| Thickness = 250 nm | Initial | 15.29 | 1.140 | 0.772 | 13.45 |
| Stabilised | 15.15 | 1.073 | 0.701 | 11.40 | |
|
|
|||||
| Thickness = 300 nm | Initial | 15.48 | 1.138 | 0.767 | 13.51 |
| Stabilised | 15.29 | 1.065 | 0.685 | 11.16 | |
|
|
|||||
| Thickness = 200 nm | Initial | 14.99 | 1.143 | 0.775 | 13.29 |
| Stabilised | 14.90 | 1.082 | 0.715 | 11.53 | |
|
|
|||||
| Thickness = 150 nm | Initial | 14.61 | 1.145 | 0.781 | 13.07 |
| Stabilised | 14.56 | 1.094 | 0.731 | 11.64 | |
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