Table 5
Sensitivity of the pm-Si:H solar cell output to the band edge line-up between P-μc-SiOx:H and pm-Si:H in cells employing a single window layer in the initial state. ΔEc and ΔEv are respectively the conduction band and valence band discontinuities and ΔEμ the band gap discontinuity between the two. In Table 4 throughout we had assumed ΔEc = ΔEv = ΔEμ/ 2.
| ZnO:Al/P-μc-SiOx/I-pm-Si:H/ | V bi | J sc | V oc | FF | Efficiency |
| N-μc-SiOx/ZnO:Al/Ag/glass | (volts) | (mA cm-2) | (volts) | (%) | |
|
|
|||||
| P-μc-SiOx/pm-Si | 1.566 | 15.89 | 1.124 | 0.760 | 13.56 |
| ΔEc = ΔEv = ΔEμ/2 | |||||
|
|
|||||
| P-μc-SiOx/pm-Si | 1.814 | 16.26 | 1.162 | 0.198 | 3.74 |
| ΔEc = 0, ΔEv = ΔEμ = 0.54 eV | |||||
|
|
|||||
| P-μc-SiOx/pm-Si | 1.314 | 15.82 | 1.143 | 0.736 | 13.31 |
| ΔEv = 0, ΔEc = ΔEμ = 0.54 eV | |||||
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