Table 4

Solar cell output of pm-Si:H solar cells, deposited in the NIP configuration, but with the light entering on the P-side. The first row gives our best experimental results [19], while the rest are model calculations. In the second row, properties of pm-Si:H deposited at 175 ^◦C are used, while in the rest those of pm-Si:H deposited at 210 ^◦C are used. ZnO in the table corresponds to aluminium-doped ZnO. The subsequent lines show the effect of different window layers and back contacts in the initial and light-stabilised states. The ZnO:Al/P-μc-SiO_x sbb is taken =0.2 eV. The last two rows show the effect of using MgF₂ ARC on ZnO:Al. Thickness of the pm-Si:H layer is 250 nm except for the last case where it is 150 nm.