Table 3
Solar cell output parameters of a-Si:H PIN cells with different window layers and back contacts in the initial and light-stabilised states. Light enters through the glass/ZnO:Al/P-layer. a-Si:H layer thickness is 200 nm. ZnO in the table corresponds to aluminium-doped ZnO. The first row gives our best experimental results [23] with a 20 nm pm-Si:H P/I buffer, while the rest are model calculations. The last line shows the effect of using MgF2 ARC on glass.
| Cell structure | Jsc (mA cm-2) | Voc (volts) | FF | Efficiency (%) | |
|
|
|||||
| Expt: Glass/ZnO/P-μc-SiOx/ | Initial | 15.17 | 0.87 | 0.729 | 9.63 |
| pm-Si:H/I-a-Si:H/N-μc-Si:H/ZnO/Ag | Stabilised | 14.65 | 0.843 | 0.636 | 7.85 |
|
|
|||||
| Glass/ZnO/P-μc-Si/P-a-SiC/ | Initial | 15.55 | 0.988 | 0.782 | 12.01 |
| I-a-Si:H/N-a-Si:H/ZnO/Ag | Stabilised | 15.01 | 0.933 | 0.603 | 8.83 |
|
|
|||||
| Glass/ZnO/P-μc-Si/P-μc-SiOx | Initial | 15.78 | 1.029 | 0.723 | 11.74 |
| /I-a-Si:H/N-a-Si:H/ZnO/Ag | Stabilised | 15.37 | 0.943 | 0.611 | 8.86 |
|
|
|||||
| Glass/ZnO/P-μc-Si/P-μc-SiOx/ | Initial | 16.07 | 1.032 | 0.729 | 12.09 |
| I-a-Si:H/N-μc-SiOx/Ag | Stabilised | 15.53 | 0.944 | 0.612 | 8.97 |
|
|
|||||
| MgF2/Glass/ZnO/P-μc-Si/ | Initial | 16.29 | 1.032 | 0.729 | 12.25 |
| P-μc-SiOx /I-a-Si:H/N-μc-SiOx /Ag | Stabilised | 15.74 | 0.944 | 0.612 | 9.09 |
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