Open Access
Table 2
Sensitivity of a pm-Si:H solar cell output to a damaged N/I and a similarly damaged P/I interface (modelling results). The cells given here have a two P-layer structure with light entering the device on the P-layer side.
| ZnO:Al/P-μc-Si/P-μc-SiOx/I-pm-Si:H/ | Jsc (mA cm-2) | Voc (volts) | FF | Efficiency | |
| N-μc-SiOx/ZnO:Al/Ag/glass | (%) | ||||
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| With a damaged N/I interface | Initial | 15.29 | 1.140 | 0.772 | 13.45 |
| Stabilised | 15.15 | 1.073 | 0.701 | 11.40 | |
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| With a damaged P/I interface | Initial | 15.41 | 1.063 | 0.665 | 10.90 |
| Stabilised | 15.26 | 1.044 | 0.608 | 9.69 | |
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