Table 1
The input parameters used to model different cases. The first 5 nm of the I-pm-Si:H layer at the N/I interface has a DB DOS of 5 × 1017 cm-3, followed by a 30 nm intermediate layer with a DOS = 2 × 1016 cm-3. The first 20 nm of the I-a-Si:H layer adjacent to the P/I interface is assumed to have a DOS of 2 × 1016 cm-3. The values have been extracted from modelling previous experimental results [11]. The parameters of N-a-Si:H are not shown as these are standard.
| Parameter | P-μc-Si:H | P-a-SiC:H | P-μc-SiOx | N-μcSiOx | I-pm-Si:H | I-a-Si:H |
|
|
||||||
| Layer thickness (nm) | 6 | 4 | 10 | 10 | 250 | 200–300 |
| Electron affinity (eV) | 4.00 | 3.89 | 3.67 | 4.00 | 3.95 | 4.00 |
| Mobility gap (eV) | 1.6 | 2.0 | 2.5 | 2.4 | 1.96 | 1.84 |
| Activation energy (eV) | 0.12 | 0.46 | 0.47 | 0.09 | 0.92 | 0.86 |
| Eff. DOS in bands (cm-3) | 2 × 1020 | 2 × 1020 | 2 × 1020 | 2 × 1020 | 2 × 1020 | 2 × 1020 |
| Ch Energy (VB tail) (eV) | 0.035 | 0.120 | 0.120 | 0.025 | 0.050 | 0.050 |
| Ch Energy (CB tail) (eV) | 0.025 | 0.07 | 0.070 | 0.015 | 0.030 | 0.030 |
| μn (μp) (cm2/V s) | 32 (8) | 20 (4) | 32 (8) | 32 (8) | 20 (12) | 20 (4) |
| DOS (cm-3) (annealed) | 3 × 1018 | 3 × 1018 | 4 × 1018 | 2 × 1018 | 7 × 1014 | 5 × 1015 |
| DOS (cm-3) (stabilized) | 3 × 1018 | 3 × 1018 | 4 × 1018 | 2 × 1018 | 2 × 1016 | 1017 |
| σn (tails) (cm2) | 10-17 | 10-17 | 10-17 | 10-17 | 10-17 | 10-16 |
| σc (tails) (cm2) | 10-16 | 10-16 | 10-16 | 10-15 | 10-15 | 5 × 10-16 |
| σn (DB) (cm2) (annealed) | 10-16 | 10-16 | 10-16 | 5 × 10-17 | 10-15 | 10-16 |
| σc (DB) (cm2) (annealed) | 5 × 10-16 | 5 × 10-16 | 5 × 10-16 | 5 × 10-15 | 5 × 10-15 | 5 × 10-16 |
| σn (DB) (cm2) (stabilized) | 10-16 | 10-16 | 10-16 | 5 × 10-17 | 10-15 | 2 × 10-16 |
| σc (DB) (cm2) (stabilized) | 5 × 10-16 | 5 × 10-16 | 5 × 10-16 | 5 × 10-15 | 2 × 10-14 | 2 × 10-14 |
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