Comparison of the external quantum efficiency (EQE) of pm-Si:H solar cells having (a) P-μc-Si:H/P-a-SiC:H double window design with an a-Si:H N-layer, but pm-Si:H intrinsic layers deposited at 175 ^◦C and 210 ^◦C in the initial state; (b) 4 types of solar cells in the initial state with P-μc-Si:H/P-a-SiC:H and P-μc-Si:H/P-μc-SiO_x double window designs both with a-Si:H N-layers, the latter emitter design with N-a-Si:H replaced by N-μc-SiO_x and the last design: with a single P-μc-SiO_x:H emitter; (c) the latter design in the initial state with and without a MgF₂ anti-reflection coating on the ZnO:Al window and (d) the ZnO:Al/P-μc-SiO_x/I-pm-Si:H/N-μc-SiO_x/ZnO:Al/Ag/glass cell in the initial and light-stabilised states.