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Fig. 5


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Calculated quantum efficiency of polycrystalline CIGSe/CdS/ZnO solar cells at a wavelength of the incident light of 1000 nm as a function of absorber grain radius. Filled symbols indicate inverted grain boundaries whereas empty symbols refer to the minimum quantum efficiency that is reached for a specific trap level (see previous figure). The dashed lines indicate the quantum efficiency without grain boundary (1D case).

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