Table 2
Parameters of the GB layer. For the density of states in the band gap are specified: the energetic position of the maximum defect densities for the donor-type and the acceptor-type defect distribution Edonor,acceptor, the maximum defect density of the distributions Ntr, the capture cross sections for electrons and holes cn,p and the standard deviation σ.
| Layer properties | ||
|
|
||
| bandgap, EG | 1.059 eV | |
| density of states | ||
| of the conduction band, | 8.020 × 1018 cm−3 | |
| NC density of states | ||
| of the valence band, NV | 7.566 × 1018 cm−3 | |
| electron mobility, μn | 193.60 cm2/V s | |
| hole mobility, μp | 68.93 cm2/V s | |
|
|
||
| Density of states in the band gap | ||
|
|
||
| defect type | donor | acceptor |
| E donor, acceptor | 0.40 eV | 0.65 eV |
| Ntr | 1016–1022 cm−3 eV−1 | |
| cn | 10−14 cm2 | 10−16 cm2 |
| c p | 10−16 cm2 | 10−14 cm2 |
| σ | 0.18 eV | |
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