Download original image
PECVD-deposited SiO2 MOS Capacitor (C-V-G) curves after parasitic effects correction using dual-frequency five-element circuit model: (a) C-V curves at different frequencies, (b) Dit extraction using high-low frequency method, (c) Dit extraction using Terman method, (d) Dit extraction using conductance method.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.