Table 2

Measured parameters and those extracted by modelling deposited HIT cells on P-type [13, 14, 15] and N-type (present study) c-Si wafers. Note that the quantities marked with superscript “a” have been measured, those marked with superscript “b” have been taken from the literature, and those marked with superscript “c”, supplied by the manufacturer. The defect density in the defective layer on the surface of the P-type c-Si wafer is 10¹¹ cm^-2 on the emitter side and 10¹² cm^-2 on the BSF side, while in the case of the N-type HIT cells these values are 4.5 × 10¹¹ cm^-2 and 10¹¹ cm^-2 at the emitter and BSF ends respectively, as extracted by modelling.

Parameters	P a-Si:H	I-pmSi:H	N c-Si	P c-Si	N-a-Si:H
		(buffer)	wafer	wafer
Layer thickness (μm)a	0.02	0.004	280	300	0.008–0.02
Mobility gap (eV)	1.75a	1.96a	1.12b	1.12b	1.8a
ΔEv with respect to c-Si (eV)	–0.41	–0.46	0	0	–0.46
Donor (Accep) doping (cm-3)	(1.41 × 1019)a	0	2 × 1015c	(9 × 1014)c	1.45 × 1019a
Effective DOS in CB (cm	2 × 1020	2 × 1020	2.80 × 1019	2.80 × 1019	2 × 1020
Effective DOS in VB (cm	2 × 1020	2 × 1020	1.04 × 1019	1.04 × 1019	2 × 1020
Charac. energy (VB tail) (eV)b	0.05	0.05	–	–	0.05
Charac. energy (CB tail) (eV)b	0.03	0.03	–	–	0.03
Expon. tail prefact.(cm-3 eV	4. × 1021	4. × 1021	–	–	4 × 1021
Elec. (hole) mobility (cm2/V s)	25 (5)	25 (5)	1500 (500)b	1000(450)b	20 (4)
Gaussian defect density (cm-3)	8 × 1018a	1015	1012	1012	9 × 1018a
Neutral σ (tails, midgap cm2)	10-17	10-17	4 × 10-18	4 × 10-19	10-17
Charged σ (tails, midgap cm2)	10-16	10-15	4 × 10-17	4 × 10-18	10-16