Table 1
Modelling of the experimental output parameters of HIT structure solar cells on N-type c-Si wafer at 300 K, having different thickness of the I-pm-Si:H layer on the emitter side (denoted by A, B, C, D). Nss (DL) is the defect density on that surface of the c-Si wafer that faces the emitter. J0 is the reverse saturation current density and n0 the diode ideality factor calculated from the experimental and model generated dark J-V characteristics.
| Cell | I-pmSi:H | Nss (DL) | J sc | V oc | FF | Efficiency | J 0 | n 0 | |
| name | thickness (nm) | (cm-2) | (mA cm-2) | (mV) | (%) | (mA cm-2) | |||
|
|
|||||||||
| A | 2.5 | 9.2 × 1011 | Expt. | 30.3 | 679 | 0.755 | 15.5 | 2.70 × 10-8 | 1.30 |
| Model | 31.2 | 673 | 0.758 | 15.9 | 2.41 × 10-8 | 1.57 | |||
|
|
|||||||||
| B | 3.3 | 6.6 × 1011 | Expt. | 30.8 | 683 | 0.767 | 16.1 | 1.60 × 10-7 | 1.43 |
| Model | 31.0 | 684 | 0.765 | 16.2 | 1.78 × 10-7 | 1.77 | |||
|
|
|||||||||
| C | 4.0 | 4.5 × 1011 | Expt. | 30.8 | 701 | 0.796 | 17.2 | 1.90 × 10-7 | 1.49 |
| Model | 31.1 | 701 | 0.807 | 17.6 | 1.10 × 10-7 | 1.42 | |||
|
|
|||||||||
| D | 4.5 | 1.6 × 1011 | Expt. | 30.6 | 706 | 0.732 | 15.8 | 5.90 × 10-8 | 1.40 |
| Model | 30.3 | 706 | 0.738 | 15.8 | 4.95 × 10-8 | 1.67 | |||
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