A modelling study of the performance of conventional diffused P/N junction and heterojunction solar cells at different temperatures

Open Access

Fig. 3

Band diagrams in thermodynamic equilibrium at 300 K for (a) a conventional P emitter / N absorber homo-junction c-Si cell and (b) a HIT cell on N-type c-Si wafer. The directions of the electric field “F" on charge carriers in (a) and “F_c" on electrons and “F_v” on holes in (b) are indicated.

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