Cumulative improvement of the solar cell output parameters by improving various device and material parameters. The parameter that is improved at each stage leading to a higher efficiency, is given in bold italics.
|cell input parameters||(mA cm-2)||(V)||(%)|
|Cell deposited experimentally (2.4 μm||16.60||0.546||0.77||7.00|
|epi-Si layer) – all flat interfaces|
|Model results for the above cell||16.63||0.547||0.778||7.07|
|Epitaxial layer thickness = 5 μm||20.35||0.549||0.767||8.57|
|Nss, back reduced to 5 × 1011 cm-2||20.36||0.580||0.747||8.83|
|N-a-Si:H/epi-Si interface textured||25.53||0.589||0.750||11.27|
|Both top & bottom of epi-Si textured||29.21||0.594||0.750||13.02|
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