Table 4
Sensitivity to the Gaussian defect density inside the epitaxial silicon layer.
| DOS in | 2.4 μm cell | |||
|
|
||||
| epi-Si | Jsc | Voc | FF | Efficiency |
| (cm-3) | (mA cm-2) | (V) | (%) | |
|
|
||||
| 1013 | 16.62 | 0.558 | 0.815 | 7.56 |
| 1014 | 16.62 | 0.556 | 0.812 | 7.51 |
| 1015 | 16.62 | 0.547 | 0.778 | 7.07 |
| 5 × 1015 | 16.60 | 0.511 | 0.721 | 6.12 |
| 1016 | 16.54 | 0.484 | 0.7 | 5.6 |
| 5 × 1016 | 15.92 | 0.410 | 0.646 | 4.22 |
| 1017 | 15.19 | 0.379 | 0.622 | 3.58 |
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