Fig. 8


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(a) The energy band diagram, (b) the recombination over the epi-Si layer and (c) around the back interface region; and (d) the electric field over the latter region for the 2.4 μm epi-Si layer cell under AM1.5 light and short-circuit conditions with the defect density at the epi-Si/P-c-Si interface as a parameter.

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